Datasheet SIRA04DP-T1-GE3 - Vishay MOSFET, 30 V, 40 A, PPAKSO-8 — Ficha de datos

Vishay SIRA04DP-T1-GE3

Part Number: SIRA04DP-T1-GE3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, 30 V, 40 A, PPAKSO-8

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Docket:
New Product
SiRA04DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

  • Continuous Drain Current Id: 40 A
  • Drain Source Voltage Vds: 30 V
  • MSL: MSL 1 - Unlimited
  • Number of Pins: 8
  • On Resistance Rds(on): 0.0018 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 27.7 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: PowerPAK SO
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 30 V
  • RoHS: Yes

Otros nombres:

SIRA04DPT1GE3, SIRA04DP T1 GE3