Datasheet NTE292MCP - NTE Electronics TRANSISTOR, NPN & PNP, 120 V, 4 A, MCP — Ficha de datos

Descripción detallada

Manufacturer: NTE Electronics

Description: TRANSISTOR, NPN & PNP, 120 V, 4 A, MCP

Download Data Sheet

Docket:
NTE291 (NPN) & NTE292 (PNP) Silicon Complementary Transistors Medium Power Amp, Switch
Description: The NTE291 (NPN) and NTE292 (PNP) are General­Purpose Medium­Power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications.

They are especially designed for series and shunt regulators and as a driver and output stage of high­fidelity amplifiers. Features: D Low Saturation Voltage Absolute Maximum Ratings: Collector­to­Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V Collector­to­Emitter Voltage (RBB = 100, VBB = 0), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V Collector­to­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter­To­Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 120 V
• DC Collector Current: 4 A
• DC Current Gain: 2
• Operating Temperature Range: -65°C to +150°C
• Power Dissipation: 40 W
• Transistor Polarity: NPN & PNP