Datasheet BFT46 - NXP TRANSISTOR, JFET, N, SOT-23 — Ficha de datos

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Manufacturer: NXP

Description: TRANSISTOR, JFET, N, SOT-23

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
BFT46 N-channel silicon FET
Product specification December 1997
NXP Semiconductors

Specifications:

• Application Code: GPA
• Current Idss Max: 60 mA
• Current Idss Min: 1 mA
• Current Ig: 5 mA
• Drain Source Voltage Vds: 25 V
• Full Power Rating Temperature: 40°C
• Gate-Source Cutoff Voltage Vgs(off) Max: 2 V
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• Package / Case: SOT-23
• Power Dissipation Max: 250 W
• Power Dissipation: 250 mW
• SMD Marking: M3p
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Transistor Type: JFET
• Zero Gate Voltage Drain Current Idss: 200 µA to 1.5 mA

RoHS: Yes