Datasheet SIHB30N60E-GE3 - Vishay MOSFET, N CH, 600 V, 29 A, D2PAK — Ficha de datos

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, N CH, 600 V, 29 A, D2PAK

Download Data Sheet

Docket:
SiHB30N60E
www.vishay.com
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY

Specifications:

• Continuous Drain Current Id: 29 A
• Drain Source Voltage Vds: 600 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 3
• On Resistance Rds(on): 0.104 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 250 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: TO-263
• Transistor Polarity: N Channel

RoHS: Yes

Otros nombres:

SIHB30N60EGE3, SIHB30N60E GE3