Datasheet C4D02120E - Cree SILICON CARBIDE (SIC) SCHOTTKY DIODE, 5.9 A, 1200 V, TO-252 — Ficha de datos

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Manufacturer: Cree

Description: SILICON CARBIDE (SIC) SCHOTTKY DIODE, 5.9 A, 1200 V, TO-252

Specifications:

• Diode Type: SiC Schottky
• Forward Current If(AV): 5.9 A
• Forward Surge Current Ifsm Max: 19 A
• Forward Voltage VF Max: 1.8 V
• Repetitive Reverse Voltage Vrrm Max: 1200 V

RoHS: Yes