Datasheet BAS45A - NXP DIODE, LOW LEAKAGE, DO-34 — Ficha de datos

Descripción detallada

Manufacturer: NXP

Description: DIODE, LOW LEAKAGE, DO-34

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D050
BAS45A Low-leakage diode

Simulation Model

Specifications:

• Current If @ Vf: 100 mA
• Current Ifsm: 4 A
• Diode Type: Small Signal
• Forward Current If(AV): 250 mA
• Forward Surge Current Ifsm Max: 4 A
• Forward Voltage VF Max: 1 V
• Forward Voltage: 1 V
• Junction Temperature Tj Max: 175°C
• Mounting Type: Axial Leaded
• Number of Pins: 2
• Package / Case: DO-34
• Power Dissipation Max: 300 mW
• Repetitive Reverse Voltage Vrrm Max: 125 V
• Reverse Recovery Time trr Max: 1.5 µs
• Reverse Recovery Time trr Typ: 1.5 µs
• SVHC: No SVHC (18-Jun-2010)

RoHS: Yes