Datasheet BA159G - Taiwan Semiconductor DIODE, FAST, 1 A — Ficha de datos

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Manufacturer: Taiwan Semiconductor

Description: DIODE, FAST, 1 A

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Docket:
BA157G THRU BA159G
1.0 AMP.

Glass Passivated Fast Recovery Rectifiers
Voltage Range 400 to 1000 Volts Current 1.0 Ampere
Features
Low forward voltage drop High current capability High reliability High surge current capability

Specifications:

• Approval Bodies: UL 94V-0
• Case Temperature Tc @ If: 25°C
• Current If @ Vf: 1 A
• Current Ifrm: 1 A
• Current Ifsm: 30 A
• Current Ir Max: 1 A
• Device Marking: BA159G
• Diode Type: Fast Recovery
• External Depth: 2.7 mm
• External Diameter: 2.7 mm
• External Length / Height: 5.2 mm
• External Width: 2.7 mm
• Forward Current If Max: 1 mA
• Forward Current If(AV): 1 A
• Forward Surge Current Ifsm Max: 30 A
• Forward Voltage VF Max: 1.2 V
• Forward Voltage: 1.2 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -65°C
• Mounting Type: Axial Leaded
• Number of Pins: 2
• Operating Temperature Range: -65°C to +150°C
• Package / Case: DO-41
• Repetitive Reverse Voltage Vrrm Max: 1 kV
• Reverse Recovery Time trr Max: 250 ns
• SVHC: No SVHC (15-Dec-2010)
• Weight: 0.0003kg

RoHS: Yes

Accessories:

• Multicomp - BA159