Datasheet BA157G - Taiwan Semiconductor DIODE, FAST, 1 A — Ficha de datos

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Manufacturer: Taiwan Semiconductor

Description: DIODE, FAST, 1 A

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Docket:
BA157 THRU BA159
1.0 AMP.

Fast Recovery Rectifiers
Voltage Range 400 to 1000 Volts Current 1.0 Ampere
Features
a a a Low forward voltage drop High current capability High reliability High surge current capability

Specifications:

• Approval Bodies: UL 94V-0
• Case Temperature Tc @ If: 25°C
• Current If @ Vf: 1 A
• Current Ifrm: 1 A
• Current Ifsm: 30 A
• Current Ir Max: 1 A
• Device Marking: BA157G
• Diode Type: Fast Recovery
• External Depth: 2.7 mm
• External Diameter: 2.7 mm
• External Length / Height: 5.2 mm
• External Width: 2.7 mm
• Forward Current If Max: 1 mA
• Forward Current If(AV): 1 A
• Forward Surge Current Ifsm Max: 30 A
• Forward Voltage VF Max: 1.2 V
• Forward Voltage: 1.2 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -65°C
• Mounting Type: Axial Leaded
• Number of Pins: 2
• Operating Temperature Range: -65°C to +150°C
• Package / Case: DO-41
• Repetitive Reverse Voltage Vrrm Max: 400 V
• Reverse Recovery Time trr Max: 150 ns
• SVHC: No SVHC (15-Dec-2010)
• Weight: 0.0003kg

RoHS: Yes

Accessories:

• Multicomp - BA157