Datasheet 6A100G - Taiwan Semiconductor DIODE, STANDARD, 6 A, 1000 V — Ficha de datos

Descripción detallada

Manufacturer: Taiwan Semiconductor

Description: DIODE, STANDARD, 6 A, 1000 V

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Docket:
6A05G - 6A100G
6.0 AMPS.

Glass Passivated Rectifiers R-6
Features
Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability Low power loss
Mechanical Data

Specifications:

• Current Ifsm: 250 A
• Diode Type: Standard Recovery
• External Diameter: 7.2 mm
• External Length / Height: 9.1 mm
• Forward Current If(AV): 6 A
• Forward Surge Current Ifsm Max: 250 A
• Forward Voltage VF Max: 1 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -65°C
• Junction to Case Thermal Resistance A: 35 °C/W
• Mounting Type: Axial Leaded
• Number of Pins: 2
• Operating Temperature Range: -65°C to +150°C
• Package / Case: R-6
• Repetitive Reverse Voltage Vrrm Max: 1 kV
• SVHC: No SVHC (15-Dec-2010)

RoHS: Yes