Datasheet MBRS260T3G - ON Semiconductor DIODE, SCHOTTKY, 2 A, SMB — Ficha de datos

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Manufacturer: ON Semiconductor

Description: DIODE, SCHOTTKY, 2 A, SMB

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MBRS260T3 Surface Mount Schottky Power Rectifier
SMB Power Surface Mount Package
This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier.

Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
Features http://onsemi.com
SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS

Specifications:

• Current Ifsm: 40 A
• Current Ir Max: 20 µA
• Diode Type: Schottky
• Forward Current If(AV): 2 A
• Forward Surge Current Ifsm Max: 40 A
• Forward Voltage VF Max: 630 mV
• Forward Voltage: 630 mV
• Junction Temperature Tj Max: 125°C
• Mounting Type: SMD
• Number of Pins: 2
• Package / Case: DO-214
• Repetitive Reverse Voltage Vrrm Max: 60 V
• SVHC: No SVHC (15-Dec-2010)

RoHS: Yes